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Datenmigration-Promotion In the spotlight

Available are 600, 1200, 1700 and 3300 V devices with rated current from 10 to 3600 A in all standard or quasi-standard packages and configurations as intelligent power modules (IPM) or standard.

Available are 600, 1200, 1700 and 3300 V devices with rated current from 10 to 3600 A in all standard or quasi-standard packages and configurations as intelligent power modules (IPM) or standard.

12.11.2013

For more than 25 years Fuji Electric (FE) delivers power modules for almost every power-electronics application worldwide. Fuji IGBTs with their long endurance, high reliability and leading-edge technology combined with excellent service in terms of logistics, technology and after-sales represent excellent value for money for the user. Advanced manufacturing in Japan and Malaysia allows maximum delivery reliability and rapid capacity adjustments to the demands of the market.Find more information at www.fujielectric.com/products/semiconductor/

Bildergalerie

  • Ultrasonic welding technology is used in high-power half-bridge modules. FEhigh-power half-bridges and choppers are available in a large range of current ratings: 1200 V, 1700 V and 600 to 1400 A, high speed and low sat. A high CTI (> 600) allows to apply the devices in harsh environments (high degree of contamination).

    Ultrasonic welding technology is used in high-power half-bridge modules. FEhigh-power half-bridges and choppers are available in a large range of current ratings: 1200 V, 1700 V and 600 to 1400 A, high speed and low sat. A high CTI (> 600) allows to apply the devices in harsh environments (high degree of contamination).

    Bild: Fuji Electric Europe

  • A new IPM with smallest dimensions (26 mm x 43 mm) and high functionality includes driver ICs and bootstrap diodes. It comes in a fully insulated DIL package with high dielectric strength (>1.5 kV).

    A new IPM with smallest dimensions (26 mm x 43 mm) and high functionality includes driver ICs and bootstrap diodes. It comes in a fully insulated DIL package with high dielectric strength (>1.5 kV).

    Bild: Fuji Electric Europe

  • By parallel-connection and optimized distribution of semiconductor chips in the high-power dual modules, a very homogeneous distribution of the power dissipation is achieved. This contributes to a well balanced heat distribution which has a positive effect on the reliability.

    By parallel-connection and optimized distribution of semiconductor chips in the high-power dual modules, a very homogeneous distribution of the power dissipation is achieved. This contributes to a well balanced heat distribution which has a positive effect on the reliability.

    Bild: Fuji Electric Euope

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